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論文

Uniform Si nano-dot fabrication using reconstructed structure of Si(110)

矢野 雅大; 魚住 雄輝*; 保田 諭; 朝岡 秀人

Japanese Journal of Applied Physics, 57(6S1), p.06HD04_1 - 06HD04_4, 2018/06

 被引用回数:4 パーセンタイル:20.17(Physics, Applied)

We have observed oxide decomposition process on Si(110). We have succeeded to observe metastable area and state by means of scanning tunneling microscope (STM) and X-ray photoemission spectroscopy (XPS), respectively.

口頭

Time evolution of morphology and electronic state of oxidized Si(110) during reduction process

矢野 雅大; 魚住 雄輝*; 保田 諭; 朝岡 秀人

no journal, , 

We have observed time evolution of morphology and electronic state of oxide Si(110) during reduction process. We found metastable area and state by means of scanning tunneling microscope (STM) and X-ray photoemission spectroscopy (XPS), respectively.

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